Electronics Devices MCQ ECE Questions Answers

Physical Electronics, Electronics Devices & ICs Questions Answer – Electronics Engineering MCQ


1) The unit of a thermal resistance of a semiconductor device is

a)Ohms

b) Ohms/oC

c) oC/OHM

d)oC/Watt

View Answer
Option – d)

2) The amount of photoelectric emission current depends on
A. frequency of incident radiation
B. intensity of incident radiation
C. both frequency and intensity of incident radiation
D. none of the above

View Answer
Option – b)

3)If a coil has diameter ‘d’, number of turns ‘N’ and form factor ‘F’ then the inductance of the coil is proportional to

a) N2dF

b) Nd2F

c) N2d2/F

d) N2d/F

View Answer
Option – c)

4) In a bipolar transistor, the base collector junction has
A. forward bias
B. reverse bias
C. zero bias
D. zero or forward bias

View Answer
Option – b)

5)A transistor has a current gain of 0.99 in the CB mode. Its current gain in the CC mode is

a) 100

b) 99

c) 1.01

d) 0.99

View Answer
Option – a)

6) The amount of photoelectric emission current depends on

frequency of incident radiation

intensity of incident radiation

both frequency and intensity of incident radiation

none of the above

View Answer
Option – b)

7) Almost all resistors are made in a monolithic integrated circuit

a) during the emitter diffusion

b) while growing the epitaxial layer

c) during the base diffusion

d) during the collector diffusion

View Answer
Option – c)

8) In a semiconductor diode, the barrier offers opposition to

holes in Pregion only

free electrons in Nregion only

majority carriers in both regions

majority as well as minority carriers in both regions

View Answer
Option – c)

9) At 250C, the collector-emitter voltage drop of a silicon transistor at saturation is approximately

a) 0.1 V

b) 0.3 V

c) 0.5 V

d) 0.7 V

View Answer
Option – b)

10) The unit of mobility is

a) m2V-1s-1

b) mV-1s-1

c) Vsm-1

d) Vms-1

View Answer
Option – a)
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